Part Number Hot Search : 
TA78L18F STS15N4 L100S20 EM83050H TA8573FN BH6111FV GL512N11 2SK359
Product Description
Full Text Search
 

To Download CR6PM-12A-A8 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  rev.1.00, aug.20.2004, page 1 of 6 cr6pm-12 thyristor medium power use rej03g0358-0100 rev.1.00 aug.20.2004 features ? i t (av) : 6 a ? v drm : 600 v ? i gt : 10 ma ? viso : 1500v ? insulated type ? planar passivation type ? ul recognized : yellow card no. e223904 file no. e80271 outline 2 to-220f 1 3 2 1 3 1. cathode 2. anode 3. gate applications switching mode power supply, regulator for autocycle, motor control, heater cont rol, and other general purpose control applications maximum ratings voltage class parameter symbol 12 unit repetitive peak reverse voltage v rrm 600 v non-repetitive peak reverse voltage v rsm 720 v dc reverse voltage v r (dc) 480 v repetitive peak off-state voltage v drm 600 v dc off-state voltage v d (dc) 480 v
cr6pm-12 rev.1.00, aug.20.2004, page 2 of 6 parameter symbol ratings unit conditions rms on-state current i t (rms) 9.4 a average on-state current i t (av) 6 a commercial frequency, sine half wave 180 conduction, tc = 85c surge on-state current i tsm 90 a 60hz sine half wave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t34a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 5w average gate power dissipation p g (av) 0.5 w peak gate forward voltage v fgm 6v peak gate reverse voltage v rgm 10 v peak gate forward current i fgm 2a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 2.0 g typical value isolation voltage viso 1500 v ta = 25c, ac 1 minute, each terminal to case electrical characteristics rated value parameter symbol min. typ. max. unit test conditions repetitive peak reverse current i rrm ? ? 2.0 ma tj = 125c, v rrm applied repetitive peak off-state current i drm ? ? 2.0 ma tj = 125c, v drm applied on-state voltage v tm ? ? 1.7 v tc = 25c, i tm = 20 a, instantaneous value gate trigger voltage v gt ? ? 1.0 v tj = 25c, v d = 6 v, i t = 1 a gate non-trigger voltage v gd 0.2 ? ? v tj = 125c, v d = 1/2 v drm gate trigger current i gt ? ? 10 ma tj = 25c, v d = 6 v, i t = 1 a holding current i h ? 15 ? ma tj = 25c, v d = 12 v thermal resistance r th (j-c) ??4.0 c/w junction to case note1 notes: 1. the contact thermal resistance r th (c-f) in case of greasing is 0.5c/w.
cr6pm-12 rev.1.00, aug.20.2004, page 3 of 6 performance curves maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) 10 0 2510 1 80 40 37 10 2 425 37 4 120 160 200 60 20 100 140 180 0 5 01 4 23 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (c/w) time (s) gate trigger voltage vs. junction temperature junction temperature (c) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (c) gate characteristics 100 (%) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 10 0 5710 1 23 5710 2 23 5 23 5 710 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ?1 i gt = 10ma p gm = 5w v gd = 0.2v i fgm = 2a p g(av) = 0.5w 60 ?40 ?60 0 20 40 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 ?20 10 2 10 ?2 10 0 10 1 7 5 3 2 10 ?1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ?3 23 57 23 10 ?2 57 2 10 ?1 10 1 357 235 7 ?60 ?40 ?20 0 20 40 60 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 typical example typical example tc = 125c v fgm = 6v v gt = 1v
cr6pm-12 rev.1.00, aug.20.2004, page 4 of 6 maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) allowable case temperature vs. average on-state current (single-phase half wave) case temperature (c) average on-state current (a) 160 120 60 40 20 140 100 80 0 8 0 2467 135 = 30 60 120 90 180 16 12 6 4 2 14 10 8 0 16 0 481214 2610 = 30 60 120 90 180 360 resistive, inductive loads 360 resistive, inductive loads allowable case temperature vs. average on-state current (single-phase full wave) allowable case temperature vs. average on-state current (rectangular wave) case temperature (c) case temperature (c) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) average on-state current (a) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) 16 12 6 4 2 14 10 8 0 16 0 4 8 12 14 2610 = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 16 0 4 8 12 14 26 10 = 30 120 180 60 90 160 120 60 40 20 140 100 80 0 16 0 4 8 12 14 26 10 = 30 120 180 dc 270 90 60 16 12 6 4 2 14 10 8 0 16 0 4 8 12 14 2610 = 30 60 120 90 180 270 dc 360 resistive loads 360 resistive, inductive loads 360 resistive loads 360 resistive, inductive loads
cr6pm-12 rev.1.00, aug.20.2004, page 5 of 6 breakover voltage vs. junction temperature junction temperature (c) 100 (%) breakover voltage (tj = tc) breakover voltage (tj = 25c) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage (dv/dt = vv/ s) breakover voltage (dv/dt = 1v/ s) 23 10 1 5710 2 23 5710 3 23 5710 4 160 0 80 100 120 140 40 60 20 160 120 60 40 20 140 100 80 0 ?60 ?40 ?20 0 20 40 60 80 100 120 140 typical example typical example tj = 125c 100 (%) holding current (tj = tc) holding current (tj = 25c) holding current vs. junction temperature junction temperature (c) 80 60 30 20 10 70 50 40 0 160 0 40 80 120 140 20 60 100 i t = 6a, ?di/dt = 5a/ s, v d = 300v, dv/dt = 20v/ s v r = 50v 10 3 7 5 3 2 10 2 7 5 3 2 10 1 ?60 ?40 ?20 0 20 40 60 80 100 120 140 160 120 60 40 20 140 100 80 0 10 2 23 10 ?1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 7 5 3 2 10 1 ?60 ?40 ?20 0 20 40 60 80 100 120 140 turn-off time vs. junction temperature turn-off time ( s) junction temperature (c) gate trigger current vs. gate current pulse width 100 (%) gate trigger current (tw) gate trigger current (dc) junction temperature (c) 100 (%) repetitive peak reverse voltage (tj = tc) repetitive peak reverse voltage (tj = 25c) gate current pulse width ( s) repetitive peak reverse voltage vs. junction temperature typical example typical example distribution typical example typical example
cr6pm-12 rev.1.00, aug.20.2004, page 6 of 6 package dimensions to-220f eiaj package code jedec code mass (g) (reference value) lead material ? 2.0 cu alloy conforms symbol dimension in millimeters min typ max a a 1 a 2 b d e e x y 1 y zd ze 10.5 max 1.3 max 5.2 2.54 2.54 2.8 0.5 2.6 0.8 3.2 0.2 8.5 1.2 5.0 17 3.6 4.5 13.5 min note 1) the dimensional figures indicate representative values unless otherwise the tolerance is specified. order code lead form standard packing quantity standard order code standard order code example straight type vinyl sack 100 type name +a cr6pm-12a lead form plastic magazine (tube) 50 type name +a ? lead forming code CR6PM-12A-A8 note : please confirm the specificat ion about the shipping in detail.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi als. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500 fax: <1> (408) 382-7501 renesas technology europe limited. dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, united kingdom tel: <44> (1628) 585 100, fax: <44> (1628) 585 900 renesas technology europe gmbh dornacher str. 3, d-85622 feldkirchen, germany tel: <49> (89) 380 70 0, fax: <49> (89) 929 30 11 renesas technology hong kong ltd. 7/f., north tower, world finance centre, harbour city, canton road, hong kong tel: <852> 2265-6688, fax: <852> 2375-6836 renesas technology taiwan co., ltd. fl 10, #99, fu-hsing n. rd., taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. 26/f., ruijin building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1, harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 200 4. re nesas technology corp ., all rights reser v ed. printed in ja pan. colophon .1.0


▲Up To Search▲   

 
Price & Availability of CR6PM-12A-A8

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X